Accession Number : AD0859130
Title : Integrated Tunnel Diode Amplifiers for X-Band Applications.
Descriptive Note : Quarterly rept. no. 2, 10 May-10 Aug 69,
Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY ELECTRONICS LAB
Personal Author(s) : Lee, C. W. ; Eide, J. ; DeNeve, R. ; Baum, E. ; Adams, N.
Report Date : AUG 1969
Pagination or Media Count : 17
Abstract : The objective of the contract is to develop an Integrated Tunnel Diode Amplifier for X-Band applications. The technical approach toward achievement of the contract goals is the application of inverse sandwich integrated techniques. The important feature of this approach is that the tunnel diode junction is formed between the transmission line and the ground plane, enabling integration of the amplifier circuitry and the diode. (Author)
Descriptors : (*MICROWAVE AMPLIFIERS, TUNNEL DIODES), (*TUNNEL DIODES, MANUFACTURING), X BAND, INTEGRATED SYSTEMS, SANDWICH CONSTRUCTION, METAL COATINGS, WAVEGUIDE CIRCULATORS, GERMANIUM, SUBSTRATES, GLASS, GOLD.
Subject Categories : Electrical and Electronic Equipment
Ceramics, Refractories and Glass
Distribution Statement : APPROVED FOR PUBLIC RELEASE