Accession Number : AD0859588
Title : Thin-Film Field-Effect Transistors,
Corporate Author : FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH
Personal Author(s) : Rybinski, J.
Report Date : 10 JUN 1969
Pagination or Media Count : 12
Abstract : Thin-film transistors with an insulated gate may be produced by thermal vaporization under vacuum. Onto a glass or quartz substrate are vaporized the metal electrodes of the source and drain separated by a space of up to several tens of microns. Onto these electrodes is deposited a semiconductor film, then an insulator, and finally a film of metal forming the electrode of the gate. (Author)
Descriptors : (*FIELD EFFECT TRANSISTORS, FILMS), MERCURY COMPOUNDS, TELLURIDES, SEMICONDUCTING FILMS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE