Accession Number : AD0859683
Title : Manufacturing In-Process Control and Measuring Techniques for Integral Electronics.
Descriptive Note : Final technical rept.,
Corporate Author : WESTINGHOUSE MOLECULAR ELECTRONICS DIV LINTHICUM HEIGHTS MD
Personal Author(s) : Varker,C. J.
Report Date : AUG 1969
Pagination or Media Count : 141
Abstract : The report summarizes three main areas of work developed in a program aimed at in-process control and measurements with the scanning electron microscope. The initial section discusses the methods of process analysis which relate to both the quality of the epitaxial material and the subsequent diffusion processes. In particular, results are presented which reveal the leakage current and related breakdown phenomena of PN junctions fabricated in the epitaxial layer. Antecedent breakdown sites, recorded with the scanning electron microscope are found to correlate with the bulk density of imperfections in the epitaxial layer. The intermediate section reveals the techniques which can be applied to the analysis of packaged integrated circuits and discusses some of its inherent limitations. Several examples of IC failure analysis are presented utilizing the EBI current display. The final section illustrates 5 specific examples in which special measurement techniques can be applied to integrated circuit components. The areas discussed which have a broad application in microelectronics are the following: geometry control, channel conduction measurements, electrical imperfections in bipolar transistors, resistor analysis and lateral diffusion measurements. (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), QUALITY CONTROL, ELECTRON MICROSCOPY, PROCESSING, EPITAXIAL GROWTH, FAILURE(ELECTRONICS)
Subject Categories : Electrical and Electronic Equipment
Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE