Accession Number : AD0859967

Title :   Transient-Radiation-Induced Latchup in Microcircuits.

Descriptive Note : Final rept. 1 Feb 68-30 Jun 69,

Corporate Author : GULF GENERAL ATOMIC CO SAN DIEGO CA

Personal Author(s) : Horiye, Handy ; Berger, Robert A.

Report Date : 30 JUN 1969

Pagination or Media Count : 129

Abstract : Research on the pnpn action as a cause of latchup in junction-isolated integrated microcircuits was accomplished both experimentally and on the computer. Four different types of integrated circuit construction were studied. Electrically induced pnpn switching was obtained between isolated components. Parasitic transistor measurements can indicate when switching will occur, but important exceptions were observed. Ionizing irradiation could cause latchup in these isolated pnpn paths even with a reverse bias on the substrate. Incipient latchup, variation between identical devices, and long turn-on times were also demonstrated. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, TRANSIENTS), RELIABILITY(ELECTRONICS), SEMICONDUCTOR DEVICES, FAILURE, IONIZATION.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE