Accession Number : AD0860714

Title :   Microwave Solid-State Device Studies.

Descriptive Note : Quarterly progress rept. no. 7, 1 Mar-1 Jun 69,

Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s) : Haddad, G. I.

Report Date : SEP 1969

Pagination or Media Count : 114

Abstract : The objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification and control. Current tasks under the program are: Microwave radiation from indium antimonide; Instabilities in germanium; Transverse and magnetic field effects on instabilities in bulk semiconductor plasmas; Gunn-effect oscillators and frequency converters; Gunn-effect amplifiers; High-power Gunn-effect devices; Avalanche-diode devices; High-power avalanche diodes; High-efficiency avalanche diodes; Solid-state device construction. (Author)

Descriptors :   *SEMICONDUCTOR DEVICES), (*MICROWAVE EQUIPMENT, MICROWAVE OSCILLATORS, INDIUM ANTIMONIDES, AVALANCHE DIODES, SEMICONDUCTORS, GERMANIUM, PLASMAS(PHYSICS), STABILITY, MICROWAVE AMPLIFIERS.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE