Accession Number : AD0861246

Title :   Single Crystal Silicon Ribbon Pilot Line.

Descriptive Note : Final technical rept. 1 Jan 68-31 Mar 69,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS

Personal Author(s) : Boatman, James C. ; Wood, Rodney D.

Report Date : OCT 1969

Pagination or Media Count : 108

Abstract : During the contract period, capability of producing single crystal ribbons with several standard orientations has been achieved. Control of thickness and width tolerances have met basic contract goals. Resistivity control of approximately plus or minus 20% was attained, comparable to conventional silicon material technology. Studies of dopant diffusion in ribbon material demonstrated that accurate control of junction characteristics could be maintained. Major effort was directed toward extending ribbon growth techniques to a width of one inch and to continuous operation. (Author)

Descriptors :   *CRYSTAL GROWTH), (*SILICON, SINGLE CRYSTALS, SEMICONDUCTORS, ETCHED CRYSTALS, DISLOCATIONS, ELECTRICAL RESISTANCE, DOPING, MANUFACTURING, PILOT PLANTS.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE