Accession Number : AD0862221

Title :   High Resolution Ion Beam Deposition of Thin Metal Films.

Descriptive Note : Interim Technical rept.,

Corporate Author : DUKE UNIV DURHAM NC DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Fair, Richard Barton

Report Date : JUN 1969

Pagination or Media Count : 147

Abstract : An ion beam deposition system was designed and built to determine the limits of resolution and deposition rates for the formation of thin films. The theoretical characteristics for deposition of thin indium films were a 0.01 cm. diameter deposit with a beam of 100 eV energy. Predicted sweep velocity was 0.016 cm/min for a film 0.000002 cm. thick. A wide-slit scanning technique was developed to measure spot size. Chromatic aberration due to energy spread of source ions limited actual spot size to 0.074 cm. for a beam current of 10-8 amperes. Measurements of sputtering effects showed that unity sputtering of indium targets by indium ions occurred at an ion energy of 550 eV as compared with the predicted energy of 200 eV. (Author)

Descriptors :   *MICROELECTRONICS), (*CIRCUITS, (*METAL FILMS, ELECTRODEPOSITION), (*ELECTRODEPOSITION, ION BEAMS), INDIUM, ION SOURCES, ELECTRIC ARCS, IONIC CURRENT, DEPOSITS, FOCUSING, RESOLUTION, RADIOFREQUENCY LENSES, SPUTTERING, OPTICAL SCANNING, ELECTRODES.

Subject Categories : Metallurgy and Metallography
      Fabrication Metallurgy
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE