Accession Number : AD0863068
Title : High Capacitance Thin Film Structures.
Descriptive Note : Quarterly progress rept. no. 2, 5 Jun-4 Sep 69,
Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE RESEARCH CENTE R
Personal Author(s) : Wasserman, Moe S. ; Feuersanger, Alfred E.
Report Date : DEC 1969
Pagination or Media Count : 6
Abstract : The deposition conditions were established for high-capacitance nickel oxide films in the new multiple-source deposition system. Preliminary life test data and information on the uniformity of characteristics were obtained, and a procedure was developed for photolithographic etching of the nickel oxide films which is expected to be adaptable to silicon integrated processing. Characterization of the film surfaces by electron microscopy was also performed. (Author)
Descriptors : (*INTEGRATED CIRCUITS, FIXED CAPACITORS), (*FIXED CAPACITORS, FILMS), NICKEL COMPOUNDS, OXIDES, SPUTTERING, MANUFACTURING, ETCHING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE