Accession Number : AD0863199

Title :   Microwave Solid-State Device Studies.

Descriptive Note : Quarterly progress rept. no. 8, 1 Jun-1 Sep 69,

Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB

Personal Author(s) : Haddad, G. I.

Report Date : NOV 1969

Pagination or Media Count : 129

Abstract : The objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification and control. Current tasks under the program are: (a) Microwave noise emission from indium antimonide (A method of estimating mobility from the transverse magnetoresistance characteristics is included in report); (b) Instabilities in germanium; (c) Transverse and magnetic field effects on instabilities in bulk semiconductors; (d) Gunn-effect oscillators and frequency converters (Includes a large-signal analysis of quenched-domain mode of Gunn-effect devices); (e) Gunn-effect devices; (f) High-power Gunn-effect devices; (g) Avalanche-diode devices; (h) High-power avalanche diodes; (i) High-efficiency avalanche diodes; (j) Solid-state device construction. (Author)

Descriptors :   *SEMICONDUCTOR DEVICES), (*MICROWAVE EQUIPMENT, MICROWAVE OSCILLATORS, INDIUM ANTIMONIDES, GERMANIUM, AVALANCHE DIODES, PLASMAS(PHYSICS), STABILITY, SEMICONDUCTORS, MICROWAVE AMPLIFIERS, FREQUENCY CONVERTERS.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE