Accession Number : AD0863597
Title : Reliability of Thin-Film Multilayer Connections.
Descriptive Note : Final technical rept. 15 Aug 68-13 Aug 69,
Corporate Author : DAVID SARNOFF RESEARCH CENTER PRINCETON NJ
Personal Author(s) : Allison, James F.
Report Date : DEC 1969
Pagination or Media Count : 54
Abstract : Many of the problems of multilevel interconnections for integrated circuits have been investigated. In the report the emphasis is on defect problems in individual layers of metallization and insulation. The problems of step edge coverage and metal surface quality are carefully addressed and delineated. Aluminum metallization as deposited from a tungsten spiral and from an electron beam gun is examined and evaluated. Molybdenum-gold as an interconnection conductor system is investigated from a process reliability viewpoint. A versatile multilevel interconnection test pattern is presented that facilitates tests for continuity, interlevel contact resistance, conductor material resistivity, pinhole detection, both edge and area dielectric breakdown effects and dielectric properties. The test pattern is designed to evaluate up to three layers of conductors and the separating insulator layers. Preliminary results on some multilevel structures are presented. Many of the typical multilevel interconnection reliability problems and failure modes are illustrated by use of the scanning electron microscope. The conclusions drawn point to areas requiring further research and development. (Author)
Descriptors : (*INTEGRATED CIRCUITS, CIRCUIT INTERCONNECTIONS), (*CIRCUIT INTERCONNECTIONS, RELIABILITY(ELECTRONICS)), FILMS, SANDWICH CONSTRUCTION, METAL COATINGS, ALUMINUM, MOLYBDENUM, GOLD, FAILURE(ELECTRONICS), ELECTRON MICROSCOPY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE