Accession Number : AD0864396

Title :   Development of Microwave Semiconductor Noise Diode and Diode Holder.

Descriptive Note : Quarterly rept. no. 2, 17 Jul-16 Oct 69,

Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA

Personal Author(s) : Noisten, J. ; Collinet, J. C.

Report Date : JAN 1970

Pagination or Media Count : 29

Abstract : A diode holder was designed that should allow converage of the frequency band from 2 GHz to 12.4 GHz. Furthermore, the work has involved the fabrication and testing of a semiconductor noise diode. Test results are given for noise power measurements between 2 and 4 GHz and between 8.5 and 12 GHz. (Author)

Descriptors :   (*NOISE GENERATORS, MICROWAVE FREQUENCY), (*AVALANCHE DIODES, RADIOFREQUENCY POWER), MICROWAVE EQUIPMENT, NOISE(RADIO), SENSITIVITY, S BAND, C BAND, X BAND, K BAND.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE