Accession Number : AD0864396
Title : Development of Microwave Semiconductor Noise Diode and Diode Holder.
Descriptive Note : Quarterly rept. no. 2, 17 Jul-16 Oct 69,
Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA
Personal Author(s) : Noisten, J. ; Collinet, J. C.
Report Date : JAN 1970
Pagination or Media Count : 29
Abstract : A diode holder was designed that should allow converage of the frequency band from 2 GHz to 12.4 GHz. Furthermore, the work has involved the fabrication and testing of a semiconductor noise diode. Test results are given for noise power measurements between 2 and 4 GHz and between 8.5 and 12 GHz. (Author)
Descriptors : (*NOISE GENERATORS, MICROWAVE FREQUENCY), (*AVALANCHE DIODES, RADIOFREQUENCY POWER), MICROWAVE EQUIPMENT, NOISE(RADIO), SENSITIVITY, S BAND, C BAND, X BAND, K BAND.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE