Accession Number : AD0864956
Title : Characteristics of the Quenched-Domain Mode of Gunn-Effect Devices.
Descriptive Note : Technical rept.,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Khandelwal, Deen D.
Report Date : JAN 1970
Pagination or Media Count : 200
Abstract : The purpose of the study is to investigate the theoretical and experimental characteristics of the quenched-domain mode of Gunn-effect devices. A realistic large-signal model is obtained by including such effects as unequal threshold and minimum domain-sustaining voltages, distinct domain formation and quenching processes, domain behavior in the presence of an RF voltage, voltage dependence of the domain width, and the displacement current. The analysis is carried out by obtaining an instantaneous current-voltage transfer characteristic for the device and using it to generate current waveforms corresponding to a given periodic voltage waveform. The large-signal results reveal the distinguishing characteristics of the quenched-domain mode. The model was also employed to study other nonlinear properties of these devices. These include the device behavior with harmonic and subharmonic voltages present, harmonic generation, frequency unconversion and down-conversion and multifrequency operation. Experiments showing the characteristics of the quenched-domain mode for many devices are described and other experiments giving its relationship to other modes (such as the LSA mode) are included. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DIODES), (*GALLIUM ARSENIDES, ELECTRICAL CONDUCTIVITY), NEGATIVE RESISTANCE CIRCUITS, HARMONIC GENERATORS, FOURIER ANALYSIS, THESES.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE