Accession Number : AD0865666

Title :   Experimental Investigation of Bulk Semiconductor Instabilities for Microwave Application.

Descriptive Note : Final scientific rept. 1 Feb 68-30 Jun 69,

Corporate Author : NORWEGIAN DEFENCE RESEARCH ESTABLISHMENT KJELLER

Personal Author(s) : Rosenberg, Georg W. ; Nordbotten, Agne

Report Date : OCT 1969

Pagination or Media Count : 24

Abstract : The construction and performance of X-band Gunn oscillators was investigated. Waveguide, coaxial and microstrip circuits were used. An equivalent circuit for the waveguide mount in the 8 - 10 GHz range was found and used in the analysis. Power output, temperature dependence, FM-noise, phase locking and varactor tuning was measured. Under pulsed conditions a delayed mode of operation was found and explained from thermal considerations. GaAs material properties were investigated, including the effects of thermal neutron radiation. Three-terminal devices have been used for frequency control. An analysis was made on Gunn oscillators with slightly inhomogeneous doping profile showing increased efficiencies with proper doping profile tailoring. The field dependent drift velocity for GaAs has been calculated by a Monte Carlo method for temperatures down to 200 K. An outline is given of a method to include impurity scattering and permit calculations down to liquid He temperatures and/or impurity concentrations up to 10 to the 17th power/cu cu. (Author)

Descriptors :   (*MICROWAVE OSCILLATORS, SEMICONDUCTOR DIODES), GALLIUM ARSENIDES, VARACTOR DIODES, TUNING DEVICES, STRIP TRANSMISSION LINES, PHASE LOCKED SYSTEMS, STABILITY, NORWAY.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE