Accession Number : AD0865681
Title : Large-Signal Impedances of Avalanche Diode Oscillators.
Descriptive Note : Technical rept.,
Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING
Personal Author(s) : Ash, Gary S.
Report Date : JAN 1970
Pagination or Media Count : 45
Abstract : The large-signal impedances of a silicon avalanche diode were measured in the 8-12 GHz region with the device operating in the active mode. A commercial diode was used to generate more than 20 mW CW at efficiencies up to 1.5 percent in a specially constructed coaxial cavity. Precise circuit measurements permitted the resolution of diode negative resistance and reactance values and indicated values of negative resistance as high as -2100 ohms at the resonant frequency. The measured values are compared with those predicted by a cascade-type model of avalanching regions. The relation between the theoretical small-signal impedance and the calculated large-signal impedance is indicated, as well as the application of these data to the design of avalanche diode oscillators. (Author)
Descriptors : *AVALANCHE DIODES), (*MICROWAVE OSCILLATORS, SILICON, ELECTRICAL IMPEDANCE, PREDICTIONS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE