Accession Number : AD0868298

Title :   Relations Between Positive Ion Sputtering and Low-Energy Electron Diffraction (LEED) of Single Crystal Surfaces, II.

Descriptive Note : Final rept. 1 Feb 68-1 Aug 69,

Corporate Author : MINNESOTA MINING AND MFG CO ST PAUL SPACE AND DEFENSE PRODUCTS DEPT

Personal Author(s) : Jacobson, Richard L.

Report Date : MAR 1970

Pagination or Media Count : 75

Abstract : Silicon (Si) and tungsten (W) single crystals were subjected to low-energy ion bombardment for the purpose of evaluating the effects of ion bombardment and post-anneals on surface structure. Bombardments were performed in a low-pressure d.c. plasma supported by a thermionic cathode. Low-energy electron diffraction (LEED) and Auger spectroscopy measurements were conducted to situ. The crystalline structure of Si surfaces was found to be very sensitive to Ar and Kr ion bombardment. Bombardment generally produced an amorphous surface layer. The threshold energy for producing surface damage Kr ions is around 5 eV. A major portion of the bombardment damage apparently anneals at normal discharge temperatures of 200 to 300 degrees C. The Auger spectrum of W exhibited a number of Auger peaks as expected from x-ray data.

Descriptors :   (*SILICON, ION BOMBARDMENT), (*TUNGSTEN, ION BOMBARDMENT), (*SINGLE CRYSTALS, SURFACE PROPERTIES), (*CRYSTAL DEFECTS, ANNEALING), ELECTRON DIFFRACTION, EPITAXIAL GROWTH, SPUTTERING, ARGON, KRYPTON, SEMICONDUCTORS.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE