Accession Number : AD0868728

Title :   GaAsP Diode-Pumped Nd:YAG Laser.

Descriptive Note : Final rept. 1 Jan-31 Dec 69,

Corporate Author : TEXAS INSTRUMENTS INC DALLAS EQUIPMENT GROUP

Personal Author(s) : Scalise, Stanley J. ; Allen, Raymond B.

Report Date : 30 APR 1970

Pagination or Media Count : 58

Abstract : The use of spontaneous, GaAsP light-emitting diodes for CW optical pumping of Nd:YAG lasers was investigated. Two diode-pumped lasers were constructed and successfully operated at liquid nitrogen temperatures (77K). CW laser outputs of 130 mW and 430 mW were obtained at 1.06 micrometers with power efficiencies of 1.23 percent and 1.02 percent, respectively. The importance of the spectral match between the laser material absorption characteristics and the GaAsP array output was determined using experimental data. A computer program was developed to calculate the diode array peak wavelength necessary for maximum utilization of available pump energy by the laser rod. Restrictions imposed on the choice of pumping geometries by available discrete diode packages were determined. Based on the results of this program, design recommendations were made for improving the performance of a diode-pumped laser. (Author)

Descriptors :   (*LASERS, OPTICAL PUMPING), (*OPTICAL PUMPING, SEMICONDUCTOR DIODES), GALLIUM ARSENIDES, PHOSPHIDES, GALLIUM COMPOUNDS, GARNET.

Subject Categories : Lasers and Masers
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE