Accession Number : AD0871171
Title : Microwave Solid-State Device Studies.
Descriptive Note : Quarterly progress rept. no. 10, 1 Dec 69-1 Mar 70,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Haddad, G. I.
Report Date : MAY 1970
Pagination or Media Count : 97
Abstract : The objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification and control. Current tasks under the program are: Microwave radiation from indium antimonide; Instabilities in germanium; Transverse and magnetic field effects on instabilities in bulk semiconductor plasmas; Gunn effect amplifiers; High power Gunn effect devices; Avalanche diode devices; Large signal analysis of high efficiency avalanche diodes; Multifrequency operation of avalanche diodes; Solid state device construction. (Author)
Descriptors : *SEMICONDUCTOR DEVICES), (*MICROWAVE EQUIPMENT, MICROWAVE OSCILLATORS, AVALANCHE DIODES, INDIUM ANTIMONIDES, GERMANIUM, PLASMAS(PHYSICS), STABILITY, MICROWAVE AMPLIFIERS.
Subject Categories : Electrical and Electronic Equipment
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE