Accession Number : AD0872175

Title :   Integrated Tunnel Diode Amplifiers for X-Band Applications.

Descriptive Note : Final rept. 11 Feb 69-10 Jun 70,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY ELECTRONICS LAB

Personal Author(s) : Kim, C. S. ; Chang, I. C. ; Wallace, B. E. ; Baum, E. ; Adams, N.

Report Date : 10 JUN 1970

Pagination or Media Count : 73

Abstract : The objective of this contract was to develop an Integrated Tunnel Diode Amplifier for X-Band applications. The general approach taken to achieve the goals of this contract was to use an extension of the inverse sandwich tunnel diode structure developed by the General Electric Company on an earlier contract. This approach incorporates the tunnel diode as an integral part of the amplifier substrate, allowing for integration of the amplifier circuitry. The important feature here is that the tunnel diode junction is formed between the transmission line and the ground plane, minimizing diode inductance and eliminating case capacitance. (Author)

Descriptors :   (*MICROWAVE AMPLIFIERS, X BAND), (*TUNNEL DIODES, RELIABILITY(ELECTRONICS)), MANUFACTURING, SPUTTERING, SUBSTRATES, GLASS, GERMANIUM, EMBEDDING SUBSTANCES, SANDWICH CONSTRUCTION, WAVEGUIDE CIRCULATORS, INTEGRATED CIRCUITS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE