Accession Number : AD0872313

Title :   Development of Thin-Film Active Devices on an Improved Insulating Substrate.

Descriptive Note : Final rept. 15 May 69-14 May 70,

Corporate Author : RCA LABS PRINCETON NJ

Personal Author(s) : Cullen, Glenn W. ; Gottlieb, G. E. ; Leibowitz, D. ; Dougherty, F. C. ; Corboy, J. F.

Report Date : JUL 1970

Pagination or Media Count : 125

Abstract : The purpose of the program is to further improve the properties of silicon thin films epitaxially deposited on single crystal magnesium aluminate spinel; to develop device processing techniques specific to the silicon-spinel system; and to evaluate various device structures fabricated in the silicon-spinel composite. (Author)

Descriptors :   *EPITAXIAL GROWTH), (*INTEGRATED CIRCUITS, MANUFACTURING), (*SILICON, (*SUBSTRATES, SPINEL), SEMICONDUCTING FILMS, SINGLE CRYSTALS, FIELD EFFECT TRANSISTORS, SEMICONDUCTOR DIODES, ETCHING.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE