Accession Number : AD0873026

Title :   Development of Improved Diodes for Missile Beacons.

Descriptive Note : Final rept.,

Corporate Author : RAYTHEON CO WALTHAM MA INFRARED AND OPTICAL RESEARCH LAB

Personal Author(s) : Debye, Peter P. ; Linden, Kurt J.

Report Date : 30 APR 1970

Pagination or Media Count : 38

Abstract : The development program was aimed at developing gallium arsenide p-n junction diodes capable of emitting the highest possible average power at room temperature operation. The general approach to the problem was to utilize the behavior of silicon as an amphoteric dopant in gallium arsenide in providing a p-n junction region capable of emitting recombination radiation at wavelengths longer than the intrinsic absorption edge of gallium arsenide. By shifting the recombination radiation to such longer wavelengths it was possible to greatly reduce the absorption losses in the bulk dome material and thereby increase the output power from the diode. It is shown in the report that successful results were obtained, in that diodes were fabricated whose output power levels and efficiencies were approximately an order of magnitude greater than those observed from diffused diodes. (Author)

Descriptors :   *INFRARED BEACONS), (*SEMICONDUCTOR DIODES, GUIDED MISSILES, GALLIUM ARSENIDES, SILICON, DOPING, INFRARED DOMES.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE