Accession Number : AD0873132

Title :   Electron-Beam-Bombarded Silicon PN-Junction Diodes.

Descriptive Note : Research and development technical rept.,

Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH NJ

Personal Author(s) : Krzyzkowski, Philip F.

Report Date : JUN 1970

Pagination or Media Count : 24

Abstract : Silicon-diode PN junctions under electron-beam bombardment exhibit current gains, resolution characteristics, and risetimes applicable to imaging devices. A number of PN junction diodes, the largest being 1 sq cm, were investigated for their current-gain characteristics under static and scanned electron beams. A test vehicle built in a demountable vacuum system is described. Photographic data are presented for an electron-beam-scanned diode showing a nonuniform current-gain variation. Diode static gain-characteristic curves are shown for bombarding voltages up to 9 kV. (Author)

Descriptors :   (*SEMICONDUCTOR DIODES, ELECTRON IRRADIATION), SILICON, GAIN, STORAGE, RESOLUTION, CAMERA TUBES.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE