Accession Number : AD0873132
Title : Electron-Beam-Bombarded Silicon PN-Junction Diodes.
Descriptive Note : Research and development technical rept.,
Corporate Author : ARMY ELECTRONICS COMMAND FORT MONMOUTH NJ
Personal Author(s) : Krzyzkowski, Philip F.
Report Date : JUN 1970
Pagination or Media Count : 24
Abstract : Silicon-diode PN junctions under electron-beam bombardment exhibit current gains, resolution characteristics, and risetimes applicable to imaging devices. A number of PN junction diodes, the largest being 1 sq cm, were investigated for their current-gain characteristics under static and scanned electron beams. A test vehicle built in a demountable vacuum system is described. Photographic data are presented for an electron-beam-scanned diode showing a nonuniform current-gain variation. Diode static gain-characteristic curves are shown for bombarding voltages up to 9 kV. (Author)
Descriptors : (*SEMICONDUCTOR DIODES, ELECTRON IRRADIATION), SILICON, GAIN, STORAGE, RESOLUTION, CAMERA TUBES.
Subject Categories : Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE