Accession Number : AD0874716

Title :   High Capacitance Thin Film Structures.

Descriptive Note : Quarterly progress rept. no. 1, 16 Mar-15 Jun 70,

Corporate Author : GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE NY BAYSIDE RESEARCH CENTE R

Personal Author(s) : Wasserman, Moe S. ; Feuersanger, Alfred E.

Report Date : AUG 1970

Pagination or Media Count : 19

Abstract : The useful operating temperature range of the thin-film A1-NiO-Au capacitors was extended by reducing the NiO film thickness, in accordance with predictions of the physical model. The capacitors perform satisfactorily in an integrable breadboard oscillator circuit. The fabrication procedure established for use with quartz substrates also yields films on oxidized silicon substrates with a specific capacitance greater than micro F/sq in. (Author)

Descriptors :   *INTEGRATED CIRCUITS), (*FIXED CAPACITORS, MANUFACTURING), (*RADIOFREQUENCY OSCILLATORS, NICKEL COMPOUNDS, ALUMINUM, GOLD, OXIDES, DIELECTRIC FILMS, SPUTTERING.

Subject Categories : Electrical and Electronic Equipment
      Fabrication Metallurgy

Distribution Statement : APPROVED FOR PUBLIC RELEASE