Accession Number : AD0875370
Title : Tunneling Spectroscopy Study of GaAs, CdS and ZnO Schottky Barrier Junctions.
Descriptive Note : Master's thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Personal Author(s) : Amos, David H.
Report Date : MAR 1970
Pagination or Media Count : 79
Abstract : An experimental study was made of phonon spectra in GaAs, CdS, and ZnO by tunneling spectroscopy. Results on GaAs showed structure in the dV/dI and the second differential of V with respect to I curves at the TA, 2TA, LO phonon energies. The TA, LA, TO, and three branches of the TO phonon were identified in CdS, as well as several multi-phonon peaks and a zero-bias conductance maximum attributable to magnetic moments localized in the barrier region. The same zero-bias anomaly, and structure at the LO phonon energy were observed in ZnO. (Author)
Descriptors : *TUNNELING(ELECTRONICS)), (*SEMICONDUCTORS, (*GALLIUM ARSENIDES, SPECTROSCOPY), (*CADMIUM SULFIDES, SPECTROSCOPY), (*ZINC COMPOUNDS, SPECTROSCOPY), OXIDES, CRYSTAL LATTICES, PHONONS, CRYOGENICS, TEST METHODS, LABORATORY EQUIPMENT, THESES.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE