Accession Number : AD0875918
Title : Microwave Solid-State Device Studies.
Descriptive Note : Quarterly progress rept. no. 11, 1 Mar-1 Jun 70,
Corporate Author : MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Personal Author(s) : Haddad, G. I.
Report Date : AUG 1970
Pagination or Media Count : 101
Abstract : The objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification and control. Current tasks under the program are: Microwave noise emission from indium antimonide; Instabilities in Germanium; Transverse and magnetic field effects on instabilities in bulk semiconductors; Gunn effect amplifiers; High power gunn effect devices; Large signal analysis of avalanche diodes; Multifrequency operation of avalanche diodes; Multifrequency operation of avalanche diodes; Solid state device construction and evaluation. (Author)
Descriptors : *SEMICONDUCTOR DEVICES), (*MICROWAVE EQUIPMENT, MICROWAVE OSCILLATORS, AVALANCHE DIODES, INDIUM ANTIMONIDES, GERMANIUM, PLASMAS(PHYSICS), STABILITY, SEMICONDUCTORS, MICROWAVE AMPLIFIERS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE