Accession Number : AD0877175

Title :   Production Engineering Measure Solid Encapsulated Semiconductor Devices.

Descriptive Note : Quarterly progress rept. no. 2, 1 Jul-30 Sep 70,

Corporate Author : GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT

Personal Author(s) : Bair, Byron L.

Report Date : NOV 1970

Pagination or Media Count : 23

Abstract : The objective of the contract is to develop and optimize production capability for the manufacture of small signal solid encapsulated transistors capable of performing to military specifications. Both NPS (device type D32D) and PNP (Device type D34E) transistors are being used as vehicles for the program. The optimization of the process for the application of a silicon nitride barrier to the NPN structure was completed. A high temperature metalization system was selected and the optimized process is briefly described in the report. The glassivation system optimization is essentially completed and is also discussed. Several preliminary reliability evaluations were conducted on the devices with the silicon nitride barrier and the beneficial effects of the barrier are described. (Author)

Descriptors :   (*TRANSISTORS, MANUFACTURING), ENCAPSULATION, SILICON COMPOUNDS, NITRIDES, SILICON, RELIABILITY, BARRIER COATINGS.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE