Accession Number : AD0877953
Title : RFI Analysis of Field Effect Devices.
Descriptive Note : Final technical rept. May 69-Aug 70,
Corporate Author : EATON CORP DEER PARK NY AIL DIV
Personal Author(s) : Pierro, John ; Kanischak, Gerald ; Flattaw, Theodore
Report Date : NOV 1970
Pagination or Media Count : 146
Abstract : The report describes a theoretical investigation of field effect transistor (FET) amplifiers and mixers. An experimental investigation of the FET amplifier was performed at VHF (60 MHz), and of the FET mixer at MF (500 kHz) and HF (20 MHz). The theoretical and experimental investigation was performed on four junction FET (JFET) devices (2N3823, 2N4416, CM647, CP650) and one Metal Oxide Silicon FET (MOSFET) device (3N152). The emphasis of the investigation was on the spurious signal generation and interference effects. A large signal model is developed for the FET and from this model, equations are derived that enable the circuit designer to predict levels of RFI in his circuits. Measurements were made of the significant interference effects in FET amplifiers and mixers and a comparison of the results showed good agreement. In addition to the discussion of RFI performance the tradeoffs between RFI performance and power gain, noise figure, and bandwidth are discussed. These considerations enable the circuit designer to make the necessary compromise to obtain a circuit that most nearly satisfies electromagnetic compatibility and system electrical performance simultaneously. (Author)
Descriptors : (*FIELD EFFECT TRANSISTORS, RADIOFREQUENCY INTERFERENCE), TRANSISTOR AMPLIFIERS, CRYSTAL MIXERS, ELECTROMAGNETIC COMPATIBILITY.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE