Accession Number : AD0879698

Title :   Epitaxial Growth and Characterization of GaAs on Spinel.

Descriptive Note : Interim rept. no. 1, 1 May-30 Oct 70,

Corporate Author : RCA LABS PRINCETON NJ

Personal Author(s) : Wang, Chih-Chun ; McFarlane, Samuel H., III ; Richman, David ; Saxena, Arjun N. ; Ladany, Ivan

Report Date : JAN 1971

Pagination or Media Count : 119

Abstract : Research on the epitaxial growth and characterization of GaAs on magnesium aluminate spinel has been carried out. Single crystal GaAs films (unintentionally doped) with thicknesses up to 70 micrometers have been grown on a spinel substrate using the vapor phase reaction between (CH3)3Ga and AsH3. The effect of growth conditions on the layer characteristics has been studied in order to achieve optimization of the film properties. Growth parameters studied include substrate orientation, substrate surface preparation, growth temperature, gas flow conditions, reactor geometry, and source material purification. The purity of the source material has been found to play a critically important role in determining both the crystallinity and the electrical properties of the films. Films with electron and hold mobilities up to, respectively, 4000 and 300 sq cm/V-sec have been prepared. Epitaxial growth of GaAs on GaAs/spinel composite using vapor phase and liquid phase techniques was explored with encouraging results. The epitaxial GaAs-spinel composites have been characterized by x-ray diffraction, electron diffraction, electron microscopy, and optical techniques. Information on the crystalline perfection, epitaxial orientation relationships, surface structures, and optical constants has been obtained. The overall single crystalline GaAs deposits are composed of crystallites which are misoriented by plus or minus 0.1 degree from the nominal orientation of the layer. The stress in the epitaxial GaAs was determined to be 1x10 to the 9th power dyne/sq cm. (Author)

Descriptors :   *SINGLE CRYSTALS), *EPITAXIAL GROWTH), (*SEMICONDUCTING FILMS, (*GALLIUM ARSENIDES, SEMICONDUCTOR DIODES, ELECTRON DIFFRACTION, ELECTRON MICROSCOPY, X RAY DIFFRACTION, ELECTRICAL PROPERTIES, GALLIUM COMPOUNDS, PHOSPHIDES, SPINEL, MOBILITY, DOPING.

Subject Categories : Crystallography
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE