Accession Number : AD0879937

Title :   Solid State V-Band Devices.

Descriptive Note : Final rept. 1 Nov 68-31 Oct 70,

Corporate Author : HUGHES RESEARCH LABS MALIBU CA

Personal Author(s) : Kramer, N. Bruce

Report Date : DEC 1970

Pagination or Media Count : 107

Abstract : Three solid state components - an exciter, modulator, and receiver - were developed for a 60 GHz communications system. The solid state exciter is an IMPATT oscillator. A new diode fabrication technique resulted in diodes that have produced up to 280 mW cw at 60 GHz. Several of these diodes accumulated over 2000 hours running time. Ion implanted epitaxial p-i-n diodes for a biphase modulator was developed that result in less than 2.5 dB insertion loss. IMPATT oscillators were combined with both varactor and p-i-n type modulators to produce a biphase modulated signal at V-band frequencies. A procedure for making GaAs honeycomb Schottky barrier mixer diodes was developed. This procedure involves ion beam machining and chemical etching. Diodes with less than 5 dB loss in down-converting from 60 to 1.5 GHz have resulted. (Author)

Descriptors :   (*TRANSMITTER RECEIVERS, EXTREMELY HIGH FREQUENCY), MICROWAVE COMMUNICATIONS, AVALANCHE DIODES, MODULATORS, CRYSTAL MIXERS, DOPING, ION BOMBARDMENT, MICROWAVE OSCILLATORS, VARACTOR DIODES.

Subject Categories : Radio Communications

Distribution Statement : APPROVED FOR PUBLIC RELEASE