Accession Number : AD0881000
Title : High-Temperature Solid-State Pressure Transducer.
Descriptive Note : Final technical rept. 3 Mar 69-31 Oct 70,
Corporate Author : CONRAC CORP DUARTE CA
Personal Author(s) : Vick, Gerald L.
Report Date : DEC 1970
Pagination or Media Count : 53
Abstract : A piezoresistive silicon pressure sensor was developed for operation at elevated temperatures. The sensor design is based on a silicon diaphragm with p-type silicon strain gages bonded to the diaphragm by means of the thermally grown silicon dioxide. The thermally grown oxide (fused quartz) provides excellent mechanical bonding as well as electrical isolation from the diaphragm. The device operates from -55C to +350C with linearity, hysteresis, and repeatability less than 0.25% of full scale output. Test data indicate that the device is capable of operating with an error band of plus or minus 2% of full scale output from room temperature to 350C. (Author)
Descriptors : (*TRANSDUCERS, PRESSURE), DETECTORS, SILICON, MANUFACTURING, STRAIN GAGES.
Subject Categories : Test Facilities, Equipment and Methods
Distribution Statement : APPROVED FOR PUBLIC RELEASE