Accession Number : AD0881063
Title : Coplanar Gunn Effect Devices.
Descriptive Note : Final rept. 1 Apr 69-31 Oct 70,
Corporate Author : MICROWAVE ASSOCIATES INC BURLINGTON MA
Personal Author(s) : Ramachandran, T. B. ; Hines, Marion E ; Paik, S. Francis ; Wallace, Roger N.
Report Date : FEB 1971
Pagination or Media Count : 174
Abstract : The purpose of this work was to develop a GaAs Sheet Gunn (Coplanar) device and circuit capability such that maximum power could be extracted from the device. Electronic tuning of the device over the 4.8 - 5.2 GHz range was also desired. Difficulties in growing N layer on semi-insulating substrates, and premature breakdown in finished devices even under pulsed conditions precluded achievement of the original contract objectives. The contract was redirected towards obtaining high power by means of amplifiers. Theoretical and experimental analysis of the Distributed Unidirectional Microwave Amplifier showed that this device offered one method of achieving the desired microwave power levels. A DUMA test vehicle employing six 0.7 W avalanche diodes demonstrated amplification at the 5-watt level, and showed electronic gain at powers as high as 9 W. (Author)
Descriptors : *AVALANCHE DIODES), (*MICROWAVE AMPLIFIERS, (*SEMICONDUCTOR DIODES, GALLIUM ARSENIDES), INTEGRATED CIRCUITS, ATTENUATORS, FERRITES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE