Accession Number : AD0881230
Title : Semiconductor Damage Study. Phase II.
Descriptive Note : Final summary rept. Apr 69-May 70,
Corporate Author : BRADDOCK DUNN AND MCDONALD INC ALBUQUERQUE NM ALBUQUERQUE OPERATIONS
Personal Author(s) : Singletary, J. B. ; Wunsch, D. C.
Report Date : FEB 1971
Pagination or Media Count : 126
Abstract : The report summarizes the results from a test and analysis program on semiconductor damage and burnout failure due to injection of high power pulse inputs to the semiconductor devices in simulation of EMP effects. It includes a discussion of theoretical principles of pulse power burnout as well as a description of test rationale and equipment used. Data on both short duration (5 to 50 nsec) and long duration (0.1 to 10 microsec) pulse effects are included. Some data is also included on power pulse effects on relays. The effect of multiple pulse as opposed to single pulse testing is discussed. (Author)
Descriptors : (*SEMICONDUCTOR DEVICES, TRANSIENTS), (*NUCLEAR EXPLOSIONS, SEMICONDUCTOR DEVICES), DAMAGE, ELECTROMAGNETIC PULSES, SEMICONDUCTORS, FAILURE(ELECTRONICS).
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE