Accession Number : AD0882088

Title :   Monolithic Infrared Mosaic Sensors (3rd Year).

Descriptive Note : Final technical rept. 16 Nov 69-31 Jan 71,

Corporate Author : WESTINGHOUSE ELECTRIC CORP DAYTON OH

Personal Author(s) : Irwin, E. L. ; Farnsworth, D. L. ; Halsor, J. ; de Wit, P.

Report Date : MAR 1971

Pagination or Media Count : 38

Abstract : The processing techniques and methods used to fabricate 100- x 178-element mosaics of germanium pnp phototransistors are presented. The use of a potassium cyanide soak as a prethermal treatment is described. The procedures for growing epitaxial layers of high quality are described as well as methods of controlling arsenic diffusion. Attention is given to many of the problems encountered and the solutions arrived at during this 3-year program. (Author)

Descriptors :   *MOSAICS(LIGHT SENSITIVE)), (*PHOTOELECTRIC CELLS(SEMICONDUCTOR), MANUFACTURING), (*INFRARED DETECTORS, GERMANIUM, TRANSISTORS, CRYSTAL GROWTH, RELIABILITY(ELECTRONICS).

Subject Categories : Electrooptical and Optoelectronic Devices
      Infrared Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE