Accession Number : AD0887630
Title : Avalanche Diode Sources and Amplifiers.
Descriptive Note : Final rept. 15 Jun 70-14 Jun 71,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Chang, Kerns K. N. ; Clorfeine, Alvin S. ; D'Aiello, Robert V. ; Ikola, Raymond J. ; Kawamoto, Hirohisa
Report Date : AUG 1971
Pagination or Media Count : 139
Abstract : The significance of this research and development to the Air Force is the extension of the operational range of high-efficiency silicon avalanche diodes from the original L-band into the S-, C-, X-, and Ku-bands and from the oscillator mode to the amplifier mode, a capability that did not previously exist, thus making the device a practical one for microwave systems application. The high output powers obtained from these diodes have met the major program requirements. The most outstanding result was a record 600-W output power at a 33% efficiency from a single-chip diode. A variety of circuits (coaxial, microstrip, and waveguide) was developed, including a novel antiparallel-microstrip circuit which looks very promising for combining power output of multiple diodes with improved heat-sinking. Another new technique which produces oscillation at higher frequencies through harmonic extraction was established from S- to Ku-band. Recent pulsed power outputs of 110 W in X-band and 68 in Ku-bands were found to be superior in device technology in duty cycle to those obtained with LSA devices. The feasibility of power amplification with avalanche diodes operating in the high-efficiency mode was also demonstrated in L-, S-, and X-bands. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, AVALANCHE DIODES), (*MICROWAVE AMPLIFIERS, AVALANCHE DIODES), (*AVALANCHE DIODES, SILICON), MANUFACTURING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE