Accession Number : AD0887871

Title :   Electroreflectance. Part 2. Electroreflectance.

Descriptive Note : Technical publication,

Corporate Author : NAVAL WEAPONS CENTER CHINA LAKE CALIF

Personal Author(s) : Seraphin,Bernhard O.

Report Date : AUG 1971

Pagination or Media Count : 26

Abstract : The contribution of the electroreflectance effect to the determination of the band structure of a solid semiconductor material is reviewed. One feature of the effect is of particular interest: the sequence of narrow spectral regions in which the electric field causes the reflectance to change most noticeably approximately coincides with the photon energies of interband transition thresholds. The bank structure information contained in temperature dependencies, effects of surface potential, field orientation, and optical polarization is discussed in detail. (Author)

Descriptors :   (*SEMICONDUCTORS, OPTICAL PROPERTIES), (*BAND THEORY OF SOLIDS, SEMICONDUCTORS), SURFACE PROPERTIES, REFLECTIVITY, ELECTRIC FIELDS, GALLIUM ARSENIDES, GERMANIUM, SILICON

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE