Accession Number : AD0887872

Title :   Electroreflectance. Part 3. Transverse Electroreflectance.

Descriptive Note : Technical publication,

Corporate Author : NAVAL WEAPONS CENTER CHINA LAKE CALIF

Personal Author(s) : Bottka,Nicholas ; Fischer,John E. ; Kyser,David S. ; Rehn,Victor L.

Report Date : AUG 1971

Pagination or Media Count : 28

Abstract : The new technique of transverse electroreflectance (TER) for observing the Seraphin effect is presented. It offers additional symmetry information on optical interband thresholds and eliminates photon-energy restrictions inherent in previous techniques. Gamma irradiation has been used to increase the resistivity of germanium to make it a suitable material for study by the TER method. Detailed measurements of polarization-dependent TER from 0.6 to 4.7 eV on gamma-ray-compensated germanium are reported. The contribution of piezoelectric strain to electroreflectance is discussed. (Author)

Descriptors :   (*SEMICONDUCTORS, OPTICAL PROPERTIES), (*BAND THEORY OF SOLIDS, SEMICONDUCTORS), SURFACE PROPERTIES, PIEZOELECTRIC EFFECT, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, PHOSPHIDES, SELENIDES, ZINC COMPOUNDS, GERMANIUM, CRYOGENICS, GAMMA RAYS, ELECTROOPTICS, REFLECTIVITY

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE