Accession Number : AD0889060

Title :   Development of 1-Watt, 6-Gigahertz Transistor.

Descriptive Note : Final rept. 28 Jun 70-28 Jun 71,

Corporate Author : RCA SOLID STATE DIV SOMERVILLE NJ

Personal Author(s) : Boles, Timothy E.

Report Date : OCT 1971

Pagination or Media Count : 20

Abstract : The objective of the program described in this report is to develop photomasks, semiconductor processing technology, and packaging concepts to a level that is capable of fabricating transistors that will deliver 1 watt of output power at a frequency of 6.0 gigahertz. The approach that was taken to achieve this goal included: Use of a metal-grid, site-ballasted, 5-watt, 3.5-gigahertz design as a test vehicle for obtaining a 1-watt, 6.0-gigahertz device. Development of a high-temperature metal grid compatible with microwave transistor processing and having a sheet resistivity of less than 2 ohms per square. Development of a p type guard-ring structure to permit the use of the lowest resistivity for a given device breakdown voltage. Improvement of emitter ballasting techniques on microwave devices to obtain optimal device performance and reliability. Development of an arsenic emitter diffusion compatible with high-frequency transistor processing. Development of a high-frequency chip carrier to allow optimal device performance at 6.0 gigahertz. DC and RF evaluation of metal-grid devices in coaxial and stripline packages. Initial RF evaluation of metal-grid devices in a high-frequency chip carrier. (Author)

Descriptors :   (*TRANSISTORS, MICROWAVE EQUIPMENT), X BAND, RADIOFREQUENCY POWER, MASKING, PROCESSING, MANUFACTURING.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE