Accession Number : AD0890725
Title : Low Work Function Photocathode.
Descriptive Note : Technical rept. 1 Nov 69-1 Aug 71,
Corporate Author : GENERAL ELECTRIC CO SCHENECTADY NY RESEARCH AND DEVELOPMENT CENTER
Personal Author(s) : Redington, Rowland W.
Report Date : JAN 1972
Pagination or Media Count : 21
Abstract : Work performed on a program to develop high quantum yield photocathodes at near infrared wavelengths is summarized. Attempts to form thin films of Ga75In25As on GaAs substrates using vacuum deposition are discussed. Results on photoemission from GaSb covered with a thin (50A) surface layer of GaP are presented indicating that the surface work function cannot be lowered in this manner. Efforts to make thin (10 microns self-supporting films of GaAs are described indicating that transparent self-supporting III-V photoemitters are feasible. (Author)
Descriptors : (*PHOTOCATHODES, SEMICONDUCTOR DEVICES), GALLIUM ARSENIDES, INDIUM COMPOUNDS, PHOTOELECTRIC EFFECT, WORK FUNCTIONS, SEMICONDUCTING FILMS, GALLIUM COMPOUNDS, PHOSPHIDES, ANTIMONY ALLOYS, GALLIUM ALLOYS, INTERMETALLIC COMPOUNDS, EPITAXIAL GROWTH.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE