Accession Number : AD0890747
Title : Manufacturing Methods and Processes for High Resistivity Thin Film Resistors for Radiation Hardened Integrated Circuits.
Descriptive Note : Interim technical rept. no. 1, 1 Jun-1 Sep 71,
Corporate Author : FAIRCHILD CAMERA AND INSTRUMENT CORP MOUNTAIN VIEW CA FAIRCHILD SEMICONDUCTOR
Personal Author(s) : Marshall, Robert W. ; Uyeda, Osamu ; Waits, R. K.
Report Date : SEP 1971
Pagination or Media Count : 28
Abstract : This report describes the initial work accomplished in the development of a high resistivity thin film resistor process for use in radiation hardened low power integrated circuits. Silicon-chromium (Si Cr) with a target resistivity of 2000 ohms per square was selected as the basic resistor material. The characteristics of Si Cr thin films formed using various compositions, deposition methods and thicknesses are described. A thin film resistor process is then defined based upon these results and the requirements of radiation hardened integrated circuits. Two circuits, a Triple 3 Input NAND Gate and a Dual J-K Master-Slave Flip Flop are being developed to demonstrate processes, techniques, and compatibility with other integrated circuit processes. (Author)
Descriptors : (*INTEGRATED CIRCUITS, HARDENING), (*RESISTORS, DEPOSITION), (*SEMICONDUCTING FILMS, ELECTRICAL RESISTANCE), (*GATES(CIRCUITS), LOGIC CIRCUITS), (*RELAXATION OSCILLATORS, MANUFACTURING), NUCLEAR RADIATION, TEMPERATURE, STABILITY, VOLTAGE, LINEAR SYSTEMS, SILICON, CHROMIUM.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE