Accession Number : AD0891259
Title : Integrated Circuit Process Development.
Descriptive Note : Annual rept. no. 2 (Final), 19 Oct 70-20 Oct 71,
Corporate Author : KDI LABTRON INC DAYTON OH
Personal Author(s) : Kennedy, Raymond F.
Report Date : JAN 1972
Pagination or Media Count : 102
Abstract : Doped spin-on films were studied for application to the buried collector isolation and base diffusion steps in the Air Force's integrated circuit process. Solid sources were studied for application to the isolation and base diffusion steps in the I. C. process. Investigations were made of the diffused layer sheet resistivity and junction depth dependencies on process conditions, surface defect-inducing properties, autodoping of the epitaxial layer, and general compatibility with the integrated circuit process. Spin-on sources used in this investigation were arsenosilicafilm for the buried collector layer diffusion, borosilicafilm and borofilm A and B for the isolation diffusion and borofilm B for the base diffusion. Solid sources used were Type A, Type M and Type M-26 boron nitride for the isolation diffusion and Type A boron nitride for the base diffusion. Compatibility of arsenosilicafilm with the overall I. C. process was improved by this development effort; borofilm A and Type A boron nitride were found to be quite suitable as source materials for the isolation and base diffusions, respectively. Further studies are recommended particularly for the use of boron nitride solid sources in the isolation diffusion. (Author)
Descriptors : (*INTEGRATED CIRCUITS, MANUFACTURING), DOPING, SILICON, FILMS, ELECTRICAL RESISTANCE, PRODUCTION CONTROL, DIFFUSION, OXIDES, NITRIDES, BORON, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE