Accession Number : AD0892528
Title : Impedance Characterization of Gunn-Effect Diode Packages at X-Band Frequencies.
Descriptive Note : Technical publication,
Corporate Author : NAVAL WEAPONS CENTER CHINA LAKE CA
Personal Author(s) : Afendykiw, Marko
Report Date : JAN 1972
Pagination or Media Count : 74
Abstract : The procedures for, and results of, experiments performed to derive a Gunn-effect diode package lumped-element equivalent circuit valid in the X-band frequency range of 8.0 to 12.4 GHz are presented. The approach taken was to postulate an equivalent circuit from the physical configuration of the diode package construction and then verify the validity of the circuit on the basis of data obtained from precise impedance measurements. The parasitic reactances associated with the packaged device constitute a coupling circuit between the diode junction and the diode mount and are particularly significant in the design of microwave circuits using solid-state devices. (Author)
Descriptors : (*SEMICONDUCTOR DIODES, ELECTRICAL IMPEDANCE), X BAND, CIRCUITS, SYNTHESIS, MICROWAVE EQUIPMENT, THESES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE