Accession Number : AD0893617

Title :   Reliability Evaluation of Radiation Hardened Quad NAND Gates.

Descriptive Note : Final technical rept.,

Corporate Author : ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s) : Kapfer, Vincent C. ; Bart, John J.

Report Date : FEB 1972

Pagination or Media Count : 82

Abstract : Radiation hardened integrated circuits of the Quad NAND Gate type were evaluated using both standard high temperature stress tests and specially designed low temperature tests. As a result of this program, effective methods were devised for accelerating the major failure mechanism, i.e., electrochemical attack of thin film nichrome resistors. The basic chemical and structural factors contributing to this mechanism were investigated using electron beam microanalysis techniques. Based upon the results of these studies, methods are proposed for minimizing the effects of this failure mechanism for this class of circuits. (Author)

Descriptors :   (*GATES(CIRCUITS), HARDENING), SEMICONDUCTING FILMS, INTEGRATED CIRCUITS, RESISTORS, NICKEL ALLOYS, CHROMIUM ALLOYS, THERMAL STRESSES, NEUTRONS, DAMAGE, RADIATION EFFECTS, RELIABILITY(ELECTRONICS), FAILURE(ELECTRONICS), ACCELERATED TESTING, ELECTROCHEMISTRY, ELECTRON BEAMS, MICROANALYSIS, LOGIC CIRCUITS.

Subject Categories : Electrical and Electronic Equipment
      Radioactiv, Radioactive Wastes & Fission Prod

Distribution Statement : APPROVED FOR PUBLIC RELEASE