Accession Number : AD0894141

Title :   High Power Solid State Amplification.

Descriptive Note : Final technical rept. 1 Jun 69-31 Nov 71,

Corporate Author : HUGHES AIRCRAFT CO TORRANCE CA ELECTRON DYNAMICS DIV

Personal Author(s) : Midford, T. A. ; Bowers, H. C. ; Fong, T. T.

Report Date : MAR 1972

Pagination or Media Count : 161

Abstract : The significance of this research and development to the Air Force is that for the first time a systematic investigation of the capabilities as well as limitations of a wide class of IMPATT diode negative resistance amplifiers have been conducted. Device and circuit studies leading to broadband solid state amplification using silicon IMPATT diodes at X-band have been carried out. Three specific tasks have been undertaken: (1) device development and characterization, (2) a multidiode amplifier circuit development task based on cascaded circulator-coupled reflection amplifier stages, and (3) a novel circuit approach making use of one or more diodes embedded in a multiple element transmission filter structure. In each of the circuit tasks, analytical and/or numerical methods have been developed for the design of multiple diode amplifiers in several coaxial, waveguide and MIC circuit configurations. Numerous experimental amplifiers with performance in good agreement with design predictions and which in general meets the goals of this program have been constructed and evaluated. Both transmission and reflection amplifiers with saturated output powers in excess of 1.3 watts and bandwidths of 10% or greater have been realized.

Descriptors :   (*MICROWAVE AMPLIFIERS, AVALANCHE DIODES), (*POWER AMPLIFIERS, X BAND), NEGATIVE RESISTANCE CIRCUITS, GAIN, BROADBAND, NONLINEAR SYSTEMS, RADIOFREQUENCY POWER, NOISE(RADIO), AMPLITUDE MODULATION, PHASE MODULATION, WAVEGUIDE CIRCULATORS, REFLECTIVITY, SILICON.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE