Accession Number : AD0894206
Title : Solid State Ku-Band Source.
Descriptive Note : Final rept. 1 Jan 70-4 Jan 72,
Corporate Author : WATKINS-JOHNSON CO PALO ALTO CA
Personal Author(s) : Kennedy, W. K. ; Monroe, J. W. ; Johnson, E. F. ; Clark, R. J. ; Brinkoetter, T. R.
Report Date : MAY 1972
Pagination or Media Count : 71
Abstract : The objective of this investigation was to develop the Limited Space-charge Accumulation (LSA) technology for both the semiconductor device and the RF circuit to permit efficient high peak power microwave generation, particularly for frequencies above X-band. Realistic pulse lengths and duty cycles were to be maintained to determine the usefulness of these devices. As part of this program, efficiencies of 22 percent were obtained at 6 GHz. The RF circuits to achieve the state-of-the-art efficiency were also carefully characterized to permit reproducible design. Difficulties with operation at 16 GHz were encountered throughout the program, however, the reasons for these difficulties are discussed as they relate to the GaAs material requirements, RF circuit design and thermal considerations. The results of preliminary lifetests are also reported. (Author)
Descriptors : (*MICROWAVE OSCILLATORS, K BAND), SEMICONDUCTOR DEVICES, SEMICONDUCTOR DIODES, GALLIUM ARSENIDES, EFFICIENCY, EPITAXIAL GROWTH, RELIABILITY(ELECTRONICS), THERMAL PROPERTIES, PACKAGED CIRCUITS, C BAND, X BAND, WAVEGUIDES, TRANSISTORS, DOPING.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE