Accession Number : AD0903447
Title : High-Power TRAPATT Devices.
Descriptive Note : Final rept. 6 Dec 71-5 Jun 72,
Corporate Author : RCA LABS PRINCETON NJ
Personal Author(s) : Clorfeine, Alvin S. ; Prager, H. John
Report Date : SEP 1972
Pagination or Media Count : 40
Abstract : The significance of this research and development to the Air Force is that the use of TRAPATT diodes for reproducibly generating large UHF powers efficiently was demonstrated. The program goals of 200 W and 20% efficiency at 500 + or - 100 MHz were far surpassed. So too was the requirement to generate such oscillations in a circuit of no larger than 3 to 4 cu. inch and weighing no more than 4 oz. A novel circuit using lumped elements was developed. The oscillator size and weight are 1.7 cu cm and 2 oz., respectively. Output power levels of 300 - 400 W with efficiencies of up to 40% were generated. If high spectral purity is desired, some power and efficiency must be sacrificed. Circuit tunability over a wide frequency range centered around 500 MHz was demonstrated. A procedure was developed for fabricating high-voltage (185 to 200 V), large-area (0.0055 sq cm), high-current-capacity (> 8 A) diodes capable of delivering the above-quoted powers at high repetition rates (10 kHz). Finally, a coupled-bar microstrip circuit, apparently capable of also meeting the contract requirements, was developed. (Author)
Descriptors : (*AVALANCHE DIODES, RADIOFREQUENCY POWER), (*MICROWAVE OSCILLATORS, AVALANCHE DIODES), ULTRAHIGH FREQUENCY, WEIGHT, STRIP TRANSMISSION LINES, VOLTAGE, MODULATORS, INTERFACES, L BAND, EFFICIENCY, SILICON, RODS, SUBSTRATES, DIFFUSION, EPITAXIAL GROWTH.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE