Accession Number : AD0903898
Title : 1.06 Micron Intensified Silicon Target TV Camera Tube.
Descriptive Note : Technical rept. 27 May 71-26 May 72,
Corporate Author : RCA ELECTRONIC COMPONENTS PRINCETON NJ ELECTRO-OPTICS LAB
Personal Author(s) : Martinelli, Ramon U. ; Schultz, Melvin L. ; Fisher, Dennis G.
Report Date : AUG 1972
Pagination or Media Count : 55
Abstract : The development of III-V SIT tubes has progressed. Successful work has been performed on both Si and GaAs transmission secondary emission (TSE) dynodes. Gains of 200 at 10 keV have been seen with Si dynodes. Accompanying every Si activation to negative electron affinity (NEA), however, are large thermionic emission densities of about 10 to the minus 10th power amps per sq cm. Gains of 112 at 20 keV have been seen with GaAs TSE dynodes, and GaAs promises to be a very suitable material. Dark currents from GaAs are 10 to the minus 15th power amps per sq cm which presents no problem. Two prototype proximity focused III-V SIT tubes have been made, showing limiting resolution at 350 TV lines. These tubes demonstrate the feasibility of the proposed development program. Present III-V semi-transparent photocathode sensitivities are >0.5% at 1.06 microns, and an exploration has begun to discover means of incorporating these photocathodes into image intensifier tubes. (Author)
Descriptors : (*INFRARED IMAGE TUBES, TELEVISION CAMERAS), (*IMAGE INTENSIFIERS(ELECTRONICS), INFRARED DETECTORS), TELEVISION DISPLAY SYSTEMS, CAMERA TUBES, ELECTRON TUBE TARGETS, INFRARED IMAGES, SECONDARY EMISSION, PHOTOELECTRONS, PHOTOCATHODES, GALLIUM ARSENIDES, SILICON, ELECTRON BEAMS, THERMIONIC EMISSION, DENSITY, INFRARED LASERS, OPTICAL TARGET DESIGNATORS, GAIN, EPITAXIAL GROWTH, FOCUSING, RESOLUTION, RELIABILITY(ELECTRONICS).
Subject Categories : Electrooptical and Optoelectronic Devices
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE