Accession Number : AD0904488

Title :   Microwave Devices in Silicon-on-Sapphire.

Descriptive Note : Final rept. 1 Jun 71-31 May 72,

Corporate Author : RCA LABS PRINCETON NJ

Personal Author(s) : Wen, Cheng P. ; Chiang, Y. S. ; Young, A. F. ; Caulton, M. ; Hershenov, B.

Report Date : OCT 1972

Pagination or Media Count : 40

Abstract : The aim of this project was to explore the feasibility of monolithic integration at microwave frequencies with epitaxially grown silicon devices on sapphire substrates. Major emphasis was placed on developing the necessary processing techniques to fabricate a truly monolithic Impatt oscillator. In the course of the project, a PIN switch AM modulator with interdigital electrodes and air-bridge cross-over connections was employed as the experimental vehicle for technology development. A silicon-on-sapphire Impatt oscillator was fabricated and was successfully operated under pulsed conditions at 13.8 GHz, demonstrating the feasibility of monolithic integration at microwave frequencies. A novel quasi-monolithic approach which involved thermal compression bonding of high-quality silicon device structures on low-loss insulating substrates with high thermal conductivity is suggested for microwave integrated circuits. (Author)

Descriptors :   (*INTEGRATED CIRCUITS, MICROWAVE FREQUENCY), (*MICROWAVE OSCILLATORS, AVALANCHE DIODES), EPITAXIAL GROWTH, MODULATORS, AMPLITUDE MODULATION, SILICON, SAPPHIRE, SUBSTRATES, BONDING, SEMICONDUCTOR DIODES, MASKING, THERMAL CONDUCTIVITY, RADIOFREQUENCY, SINGLE CRYSTALS, GALLIUM ARSENIDES, CAPACITANCE, DIELECTRICS, ELECTRICAL RESISTANCE.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE