Accession Number : AD0904625

Title :   Electroreflectance. Part 8. Symmetry Analyses.

Descriptive Note : Technical publication,

Corporate Author : NAVAL WEAPONS CENTER CHINA LAKE CA

Personal Author(s) : Bottka, N. ; Donovan, T. M. ; Fischer, J. E. ; Kyser, D. S. ; Rehn, V. L.

Report Date : OCT 1972

Pagination or Media Count : 33

Abstract : In semiconductors, a correlation between the observed electroreflectance and the characteristic parameters of the energy-band structure has been established. More recently, by using the inherent symmetry breaking properties of the modulating electric field, even more detailed information has been obtained about the 'k-space' origin of optical transitions. These symmetry analysis studies, both theoretical and experimental, were initiated and completed at NWC. The results of these studies are presented in three reprints of papers previously published in the open literature under the following titles: (1) 'Symmetry Analysis of Electroreflectance Spectra'; (2) 'Detailed Study of the Gamma (sub 15) Conduction-Band Minimum in Germanium by Photoemission and Transverse Electroreflectance'; and (3) 'Symmetry of the 4.5-eV Optical Interband Threshold in GaAs'.

Descriptors :   *BAND THEORY OF SOLIDS), *BRILLOUIN ZONES), (*SEMICONDUCTORS, (*SYMMETRY(CRYSTALLOGRAPHY), (*ELECTROOPTICS, ANISOTROPY), PHYSICAL PROPERTIES, BAND SPECTRA, DOPING, ELECTRON PARAMAGNETIC RESONANCE, LINE SPECTRA, SECONDARY EMISSION, ELECTRON TRANSITIONS, TENSOR ANALYSIS, VECTOR ANALYSIS, PERTURBATION THEORY, MOLECULAR ENERGY LEVELS, TRANSISTORS, CRYSTAL LATTICES, ELECTRIC FIELDS, MATRICES(MATHEMATICS), PHOTOELECTRIC EFFECT, MODULATION, GERMANIUM, GALLIUM ARSENIDES, SELECTION RULES(PHYSICS), POLARIZATION.

Subject Categories : Electrooptical and Optoelectronic Devices
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE