Accession Number : AD0906872
Title : Cathode-Driven, High Gain, Crossed-Field Amplifier.
Descriptive Note : Interim development rept. no. 2, 1 Sep-30 Nov 72,
Corporate Author : RAYTHEON CO WALTHAM MA MICROWAVE AND POWER TUBE DIV
Personal Author(s) : MacMaster, George ; Dudley, Kenneth
Report Date : 18 JAN 1973
Pagination or Media Count : 14
Abstract : A cathode-driven, S-band, crossed-field amplifier is being developed to achieve high gain. This amplifier will have a pure metal secondary emitting cathode formed into a slow-wave structure to propagate rf power. Since the rf drive power is close to the cathode where the electrons are emitted, it can control the electrons in a low-energy region. Therefore, a traveling electric field of relatively small amplitude will have considerable effect on the electrons. During this report period, slow-wave circuits were developed for the cathode structure. From the cold test versions of the cathode circuit, the desired phase shift characteristics were obtained along with a satisfactory impedance match. An internal rf termination has been assembled for the cathode circuit. A dc blocked rf transition has been designed, and a colt test model has been assembled. The rf match is desirable with less than 0.65 dB transmission loss across the operating band of interest. A hot test anode has been completed, and initial isolation measurements were made between the cathode and anode circuit. (Author)
Descriptors : *MICROWAVE AMPLIFIERS), (*CROSSED FIELD DEVICES, POWER AMPLIFIERS, CATHODES(ELECTRON TUBES), GAIN, S BAND, ELECTRIC FIELDS, ELECTRONS, PHASE SHIFT CIRCUITS, IMPEDANCE MATCHING, ANODES(ELECTRON TUBES), DRIVES, STANDING WAVE RATIOS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE