Accession Number : AD0908969
Title : Production Engineering Measure Solid Encapsulated Semiconductor Devices.
Descriptive Note : Quarterly progress rept. no. 11, 1 Sep-1 Dec 72,
Corporate Author : MOTOROLA INC PHOENIX AZ SEMICONDUCTOR GROUP
Personal Author(s) : Donnally, LeRoy C. ; Wright, James C.
Report Date : DEC 1972
Pagination or Media Count : 53
Abstract : The purpose of this PEM is to develop the production capacity to produce small signal plastic transistors capable of qualifying for military applications. Tests A and B: a comparison of two types of wafer passivation. Test A wafers are SiO2 passivated and Test B wafers are Si3N4 passivated. Test C: a comparison of two methods of device surface cleaning. The samples built under Tests A and B were cleaned using deionized water during assembly. The samples built for Test C were the same as Test A and B samples except a 500 C steam clean was performed while the devices were still in wafer form. Test D: a comparison of various assembly methods. The devices built for tests A, B and C were assembled with and without die coat and backfill (silicone impregnation). Test H: a comparison of a new gold front metallization to the standard aluminum front metal used in Tests A through D. Test E: assembly of the best performer from all previous tests and shipment of the first article. Test F: assembly and shipment of the production devices.
Descriptors : (*TRANSISTORS, MANUFACTURING), ENCAPSULATION, PLASTIC COATINGS, SILICON DIOXIDE, SILICON COMPOUNDS, NITRIDES, ALUMINUM, TITANIUM, PLATINUM, GOLD, STEAM, DEGASIFICATION, CLEANING, COBALT, PRODUCTION CONTROL, ETCHING, DIFFUSION, ACCEPTABILITY, SILICONES, SUBSTRATES.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE