Accession Number : AD0909772

Title :   10.6 Micron Photodetector.

Descriptive Note : Final rept. 25 Nov 70-28 Feb 73,

Corporate Author : ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s) : Longo, Joseph T. ; Andrews, A. Michael

Report Date : APR 1973

Pagination or Media Count : 124

Abstract : The report is on PbSnTe homo- and heterojunction photodiodes which are sensitive to the 8-14 microns portion of the IR spectrum and operable above 77 K. The results cover three main areas: (1) Single element 10.6 microns photodiodes with frequency response in excess of 1 GHz for laser radar and communication systems; (2) Low frequency-high D arrays; (3) Dielectric constant measurements in the depletion region of p-n diodes to determine the upper limit on the frequency response of PbSnTe detectors.

Descriptors :   *PHOTODIODES), (*INFRARED DETECTORS, SEMICONDUCTORS, LEAD ALLOYS, TIN ALLOYS, TELLURIDES, GAS LASERS, OPTICAL RADAR, DOPPLER SYSTEMS, OPTICAL COMMUNICATIONS, INFRARED LASERS, ILLUMINATION.

Subject Categories : Electrical and Electronic Equipment
      Infrared Detection and Detectors
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE